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STGB30H60DFB

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STGB30H60DFB

Gate-Emitter Leakage Current : + / - 250 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 60 A

Pd - Power Dissipation : 260 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : D2PAK-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 1.55 V

Manufacturer : STMicroelectronics

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